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PolarHTTM HiPerFET IXFN 180N15P Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS ID25
RDS(on) trr
= 150 V = 150 A 11 m 200 ns
Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md VISOL TL Weight
Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
Maximum Ratings 150 150 20 30 150 100 380 60 100 4 10 680 V V V V A A A A mJ J V/ns W
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Mounting torque Terminal connection torque (M4) 50/60 Hz t = 1 min IISOL 1 mA t=1s 1.6 mm (0.062 in.) from case for 10 s
-55 ... +175 C 175 C -55 ... +150 C 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 2500 V~ 3000 V~ 300 30 C g
Features
* International standard package * Encapsulating epoxy meets
UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
* miniBLOC with Aluminium nitride
l l
l
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS, VGS = 0 V TJ = 150 C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 100 25 500 11 V V nA A A m
Advantages
l l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 90 A Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99241E(01/06)
IXFN 180N15P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 55 86 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 2250 515 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 90 A RG = 3.3 (External) 32 150 36 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 90 A 55 140 S pF pF pF ns ns ns ns nC nC nC 0.22 CW 0.05 C/W SOT-227B Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 90 A, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. typ. Max. 180 380 1.5 A A V
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V, VGS = 0 V 0.6 6
200 ns C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFN 180N15P
Fig. 1. Output Characte r is tics @ 25C
180 160 140 V GS = 10V 9V 280 240 320 V GS = 10V 9V
Fig. 2. Exte nde d Output Characte r is tics @ 25C
I D - Amperes
120 100 80
I D - Amperes
8V
200 8V 160 120 80 7V
7V 60 40 20 0 0 0.4 0.8 1.2 1.6 2
6
40 0 0 1 2 3
6V 4 5 6 7 8 9 10
V D S - V olts Fig. 3. Output Characte r is tics @ 150C
180 160 140 V GS = 10V 9V 2.8 2.6 2.4
V D S - V olts
Fig. 4. RDS(on ) Norm alize d to ID = 90A V alue vs . Junction Te m pe r atur e
V GS = 10V
R D S ( o n ) - Normalized
I D - Amperes
120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3
8
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 90A I D = 180A
7V
6V 5V 3.5 4
V D S - V olts Fig. 5. RDS(on) Norm alize d to ID = 90A V alue vs . Dr ain Cur re nt
3.4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Tem perature
120 External Lead Current Limit 100
3.1
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 50 100
TJ = 175C
V GS = 10V V GS = 15V TJ = 25C
I D - Amperes
350
80 60 40
20 0
I D - A mperes
150
200
250
300
-50
-25
0
25
50
75
100
125 150 175
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFN 180N15P
Fig. 7. Input Adm ittance
250 225 200 100 80 120 TJ = -40C 25C 150C
Fig. 8. Trans conductance
I D - Amperes
150 125 100 75 50 25 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 TJ = 150C 25C -40C
- Siemens
fs
175
60
g
40 20
0 0 25 50 75 100 125 150 175 200 225 250
V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage
350 300 250 10 9 8 7 V DS = 75V I D = 90A I G = 10m A
I D - A mperes Fig. 10. Gate Char ge
I S - Amperes
V G S - Volts
TJ = 150C TJ = 25C 0.3 0.5 0.7 0.9 1.1 1.3 1.5
200 150 100 50 0
6 5 4 3 2 1 0
V S D - V olts Fig. 11. Capacitance
100,000
0
25
50
75
100 125 150 175 200 225 250
Q G - NanoCoulombs
Fig. 12. Forw ard-Bias Safe Operating Area
1000
f = 1M Hz
Capacitance - picoFarads
10,000
Cis
R DS(on) Limit
25s 100s
Cos
1,000
I D - Amperes
100 1ms
Crs
TJ = 175C TC = 25C DC 10 100 1000 10ms
100 0 5 10 15
10
V DS - V olts
20
25
30
35
40
1
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 180N15P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.000
R( t h ) J C - C / W
0.100
0.010
0.001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
(c) 2006 IXYS All rights reserved
IXYS REF: T_180N15P (88) 03-23-06-C.xls

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